2SD1213 Datasheet, PDF (2/3 Pages) Savantic, Inc. – Silicon NPN Power Transistors

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1213
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=1mA ;RBE=;
V(BR)CBO Collector-base breakdown voltage
IC=1mA; IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA; IC=0
VCEsat Collector-emitter saturation voltage IC=8A; IB=0.4A
ICBO
IEBO
hFE-1
hFE-2
fT
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
VCB=40V; IE=0
VEB=4V; IC=0
IC=1A ; VCE=2V
IC=10A ; VCE=2V
IC=1A ; VCE=5V
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=10A;IB1=-IB2=-0.5A
VCC=10V ;RL=1D
h_FE-1 Classifications
Q
R
S
70-140 100-200 140-280
MIN TYP. MAX UNIT
30
V
60
V
6
V
0.4
V
0.1
mA
0.1
mA
70
280
30
120
MHz
0.3
µs
0.6
µs
0.02
µs
2