2SD1212 Datasheet, PDF (2/4 Pages) Savantic, Inc. – Silicon NPN Power Transistors

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1212
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CBO Collector-base breakdown voltage
IC=1mA ; IE=0
V(BR)CEO Collector-emitter breakdown voltage IC=1mA ;RBE=;
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ; IC=0
VCEsat Collector-emitter saturation voltage IC=5A, IB=0.25A
ICBO
Collector cut-offcurrent
VCB=40V;IE=0
IEBO
Emitter cut-offcurrent
VEB=4V;IC=0
hFE-1
DC current gain
IC=1A ; VCE=2V
hFE-2
DC current gain
IC=6A ; VCE=2V
fT
Transition frequency
IC=1A ; VCE=5V
Switching times
t_on
Turn-on time
t_stg
Storage time
t_f
Fall time
IC=5A ;IB1=0.5A
IB2=-0.5A;
MIN TYP MAX UNIT
60
V
30
V
6
V
0.4
V
0.1
mA
0.1
mA
70
280
30
120
MHz
0.20
µs
0.50
µs
0.03
µs
h_FE-1 classifications
Q
R
S
70-140 100-200 140-280
2