2SD1208 Datasheet, PDF (2/3 Pages) Savantic, Inc. – Silicon NPN Power Transistors

SavantIC Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO
Collector-emitter breakdown voltage IC=100mA ;IB=0
VCBO
Collector-base breakdown voltage
IC=100mA ;IE=0
VCEsat-1 Collector-emitter saturation voltage IC=0.5A ;IB=1mA
VCEsat-2 Collector-emitter saturation voltage IC=1A; IB=1mA
VBE
Base-emitter on voltage
IC=0.5A;VCE=5V
IEBO
Emitter cut-off current
VEB=6V; IC=0
hFE
DC current gain
IC=0.5A ; VCE=5V
Product Specification
2SD1208
MIN TYP. MAX UNIT
45
75
V
45
75
V
1.5
V
2.5
V
1.8
V
0.1
mA
2000
20000
2