2SD1196 Datasheet, PDF (2/3 Pages) Savantic, Inc. – Silicon NPN Power Transistors

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1196
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CBO Collector-base breakdown voltage
IC=5mA ; IE=0
V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;RBE=>
VCEsat Collector-emitter saturation voltage IC=4A, IB=8mA
VBEsat Base-emitter saturation voltage
IC=4A, IB=8mA
ICBO
Collector cut-offcurrent
VCB=80V;IE=0
IEBO
Emitter cut-offcurrent
VEB=5V;IC=0
hFE
DC current gain
IC=4A ; VCE=3V
fT
Transition frequency
Switching times
IC=4A ; VCE=5V
t_on
Turn-on time
t_stg
Storage time
t_f
Fall time
IC=500IB1=-500IB2=4A
VCC=50V;RL=12.5E;
MIN TYP MAX UNIT
110
V
100
V
0.9
1.5
V
2.0
V
0.1
mA
3.0
mA
1500 4000
20
MHz
0.6
µs
4.8
µs
1.6
µs
2