2SD1185 Datasheet, PDF (2/3 Pages) List of Unclassifed Manufacturers – SILICON NPN TRIPLE DIFFUSED POWER SWITCHING

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1185
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)EBO Emitter-base breakdown voltage
IE=10mA ;IC=0
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;RBE=7
VCEsat Collector-emitter saturation voltage IC=4A; IB=0.8A
VBEsat
Base-emitter saturation voltage
IC=4A; IB=0.8A
ICES
Collector cut-off current
VCE=1200V; RBE=0
IEBO
Emitter cut-off current
VEB=6V; IC=0
hFE
DC current gain
IC=0.3A ; VCE=5V
Switching times
tf
Fall time
ts
Storage time
IC=4A ;IB1=0.8A; IB2=-2A
MIN TYP. MAX UNIT
6
V
800
V
5.0
V
1.5
V
0.5
mA
0.1
mA
10
30
1.0
µs
1.0
µs
2