2SD1159 Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – TV Horizontal Deflection Output, High-Current Switching Applications

SavantIC Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=5mA ;RBE=:
V(BR)CBO Collector-base breakdown voltage
IC=5mA ;IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=5mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=4A, IB=0.4A
VBEsat
Base-emitter saturation voltage
IC=4A, IB=0.4A
ICBO
Collector cut-off current
VCB=40V;IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=5V
hFE-2
DC current gain
IC=4A ; VCE=5V
fT
Transition frequency
IC=1A ; VCE=5V
Switching times
tf
Fall time
IC=5A;IB1=-IB2=0.5A;
VCC=50V
Product Specification
2SD1159
MIN TYP. MAX UNIT
60
V
200
V
6
V
0.5
1.0
V
1.5
V
0.1
mA
0.1
mA
30
160
25
10
MHz
0.2
0.5
µs
2