2SD1137 Datasheet, PDF (2/5 Pages) Hitachi Semiconductor – Silicon NPN Triple Diffused

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1137
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=50mA; RBE=9
V(BR)EBO Emitter-base breakdown votage
IE=1mA; IC=0
VCEsat Collector-emitter saturation voltage IC=1 A;IB=0.1 A
ICEO
Collector cut-off current
VCE=80V; RBE=9
IEBO
Collector cut-off current
VEB=3.5V; IC=0
hFE-1
DC current gain
IC=0.5A ; VCE=4V
hFE-2
DC current gain
IC=50mA ; VCE=4V
MIN TYP. MAX UNIT
100
V
4
V
1.0
V
100
50
50
250
25
350
2