2SD1133 Datasheet, PDF (2/4 Pages) Hitachi Semiconductor – Silicon NPN Triple Diffused

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1133 2SD1134
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter
breakdown voltage
2SD1133
2SD1134
IC=50mA; RBE=;
V(BR)CBO Collector-base breakdown voltage IC=10µA; IE=0
V(BR)EBO Emitter-base breakdown votage
IE=10µA; IC=0
VCEsat Collector-emitter saturation voltage IC=2 A;IB=0.2 A
VBE
Base-emitter voltage
IC=1A ; VCE=4V
ICBO
Collector cut-off current
VCB=50V; IE=0
hFE-1
DC current gain
IC=1A ; VCE=4V
hFE-2
DC current gain
IC=0.1A ; VCE=4V
fT
Transition frequency
IC=0.5A ; VCE=4V
MIN TYP. MAX UNIT
50
V
60
70
V
5
V
1.0
V
1.0
V
1
µA
60
320
35
7
MHz
h_FE-1 classifications
B
C
D
60-120 100-200 160-320
2