2SD1115K Datasheet, PDF (2/3 Pages) Inchange Semiconductor Company Limited – Silicon NPN Power Transistors

SavantIC Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter sustaining voltage
IC=2A ; PW=50µs
f=50Hz, L=10mH
VCBO
Collector-base breakdown voltage IC=0.1A ,IE=0
VEBO
Emitter-base breakdown voltage
IE=50mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=2A; IB=20mA
VBEsat
Base-emitter saturation voltage
IC=2A; IB=20mA
ICEO
Collector cut-off current
VCE=300V; RBE=A
hFE
DC current gain
IC=2A ; VCE=2V
Switching times
ton
Turn-on time
toff
Turn-off time
IC=2A;IB1=- IB2=20mA
Product Specification
2SD1115K
MIN TYP. MAX UNIT
300
V
400
V
7
V
1.5
V
2.0
V
0.1
mA
500
1.0
µs
22
µs
2