2SD1110 Datasheet, PDF (2/3 Pages) Savantic, Inc. – Silicon NPN Power Transistors

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1110
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0
VCE_(sat) Collector-emitter saturation voltage IC=5A ;IB=0.5A
VBE_(sat) Base-emitter saturation voltage
IC=5A ;IB=0.5A
ICBO
Collector cut-off current
VCB=120V; IE=0
IEBO
Emitter cut-off current
VEB=6V; IC=0
hFE-1
DC current gain
IC=20mA ; VCE=5V
hFE -2
DC current gain
IC=1A ; VCE=5V
COB
Output capacitance
IE=0 ; VCB=10V;f=1MHz
fT
Transition frequency
IC=0.2A ; VCE=5V
MIN TYP. MAX UNIT
120
V
2.0
V
2.0
V
50
µA
50
µA
20
40
200
190
pF
15
MHz
2