2SD1088 Datasheet, PDF (2/5 Pages) Mospec Semiconductor – POWER TRANSISTORS(6A,250V,30W)

SavantIC Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.5A ;L=40mH
VCEsat Collector-emitter saturation voltage IC=4A;IB=0.04A
VBEsat
Base-emitter saturation voltage
IC=4A ;IB=0.04A
ICBO
Collector cut-off current
VCB=300V; IE=0
IEBO
Emitter cut-off current
hFE-1
DC current gain
hFE-2
DC current gain
COB
Collector output capacitance
VEB=5V; IC=0
IC=2A ; VCE=2V
IC=4A ; VCE=2V
f=1MHz;VCB=50V
Product Specification
2SD1088
MIN TYP. MAX UNIT
250
V
2.0
V
2.5
V
0.5
mA
0.5
mA
2000
200
35
pF
2