2SD1065 Datasheet, PDF (2/4 Pages) Inchange Semiconductor Company Limited – Silicon NPN Power Transistors

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1065
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage _{IC=1mA ;RBE=>}
V(BR)CBO Collector-base breakdown voltage
IC=1mA ;IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=8A; IB=0.4A
ICBO
Collector cut-off current
VCB=40V; IE=0
IEBO
Emitter cut-off current
VEB=4V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=2V
hFE-2
DC current gain
IC=8A ; VCE=2V
fT
Transition frequency
IC=1A ; VCE=5V
Switching times
ton
Turn-on time
tstg
Storage time
tf
Fall time
IC=2.0A; IB1=-IB2=0.2A
VCC=20V;RL=10E
h_FE-1 Classifications
Q
R
S
70-140 100-200 140-280
MIN TYP. MAX UNIT
50
V
60
V
6
V
0.18
0.4
V
0.1
mA
0.1
mA
70
280
30
20
MHz
0.20
µs
0.10
µs
1.00
µs
2