2SD1049 Datasheet, PDF (2/3 Pages) Fuji Electric – TRIPLE DIFFUSED PLANER TYPE HIGH CURRENT HIGH SPEED SWITCHING

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1049
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0
V(BR)CBO Collector-base breakdown voltage
IC=0.1mA ;IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=0.1mA ;IC=0
VCEsat
VBEsat
ICBO
IEBO
Collector-emitter saturation voltage IC=25A; IB=2.5A
Base-emitter saturation voltage
IC=25A ;IB=2.5A
Collector cut-off current
VCB=120V; IE=0
Emitter cut-off current
VEB=7V; IC=0
hFE
DC current gain
IC=25A ; VCE=5V
Switching times
ton
Turn-on time
tstg
Storage time
tf
Fall time
IC=25A IB1=-IB2=2.5A
RL=3B;PW=20µs;
DutyC2%
MIN TYP. MAX UNIT
80
V
120
V
7
V
1.5
V
2.0
V
0.1 mA
0.1 mA
20
1.0
µs
2.5
µs
0.4
µs
2