2SD1037 Datasheet, PDF (2/3 Pages) Savantic, Inc. – Silicon NPN Power Transistors

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1037
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=50mA; IB=0
VCEsat Collector-emitter saturation voltage IC=10 A;IB=1 A
VBEsat
Base-emitter saturation voltage
IC=10 A;IB=1 A
ICBO
Collector cut-off current
VCB=80V; IE=0
IEBO
Emitter cut-off current
hFE
DC current gain
fT
Transition frequency
COB
Output capacitance
VEB=6V; IC=0
IC=10A ; VCE=4V
IC=1A ; VCE=4V
IE=0; VCB=10V;f=1MHz
MIN TYP. MAX UNIT
120
V
0.5
V
1.5
V
5
µA
5
µA
20
1.5
MHz
210
pF
2