2SD1026 Datasheet, PDF (2/3 Pages) Shindengen Electric Mfg.Co.Ltd – Darlington Transistor(15A NPN)

SavantIC Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEsat Collector-emitter saturation voltage IC=10A; IB=20mA
VBEsat
Base-emitter saturation voltage
IC=10A; IB=20mA
ICEO
Collector cut-off current
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
hFE
DC current gain
VCE=100V; IB=0
VCB=100V; IE=0
VEB=7V; IC=0
IC=10A ; VCE=3V
fT
Transition frequency
IC=1.5A ; VCE=10V
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=15A; IB1=IB2=20mA
RL=2>;VBB2=4V
Product Specification
2SD1026
MIN TYP. MAX UNIT
1.5
V
2.0
V
0.1
mA
0.1
mA
5
mA
1500
30000
20
MHz
2
µs
5
µs
3
µs
2