2SD1024 Datasheet, PDF (2/3 Pages) Shindengen Electric Mfg.Co.Ltd – Darlington Transistor(8A NPN)

SavantIC Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEsat Collector-emitter saturation voltage IC=5A; IB=6mA
VBEsat
Base-emitter saturation voltage
IC=5A; IB=6mA
ICEO
Collector cut-off current
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
hFE
DC current gain
VCE=100V; IB=0
VCB=100V; IE=0
VEB=7V; IC=0
IC=5A ; VCE=3V
fT
Transition frequency
IC=0.8A ; VCE=10V
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=8A; IB1=IB2=8mA
RL=3@;VBB2=4V
Product Specification
2SD1024
MIN TYP. MAX UNIT
1.5
V
2.0
V
0.1
mA
0.1
mA
5
mA
1500
30000
20
MHz
2
µs
5
µs
3
µs
2