2SD1023 Datasheet, PDF (2/3 Pages) Shindengen Electric Mfg.Co.Ltd – Darlington Transistor(5A NPN)

SavantIC Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEsat Collector-emitter saturation voltage IC=3A; IB=5mA
VBEsat
Base-emitter saturation voltage
IC=3A ;IB=5mA
ICEO
Collector cut-off current
VCE=200V; IB=0
ICBO
Collector cut-off current
VCB=200V; IE=0
IEBO
Emitter cut-off current
VEB=7V; IC=0
hFE
DC current gain
IC=3A ; VCE=3V
fT
Transition frequency
IC=0.5A ; VCE=10V
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=3A; IB=5mA
RL=10@
VBB2=4V
Product Specification
2SD1023
MIN TYP. MAX UNIT
1.5
V
2.0
V
0.1
mA
0.1
mA
5
mA
1500
30000
20
MHz
2
µs
8
µs
5
µs
2