2SC5386 Datasheet, PDF (2/4 Pages) Toshiba Semiconductor – NPN TRIPLE DIFFUSED MESA TYPE (HORIZONTAL DEFLECTION OUTPUT FOR MEDIUM RESOLUTION DISPLAY, COLOR TV. HIGH SPEED SWITCHING APPLICATIONS)

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC5386
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0
VCEsat Collector-emitter saturation voltage IC=6A; IB=1.5A
VBEsat
Base-emitter saturation voltage
IC=6A; IB=1.5A
ICBO
Collector cut-off current
VCB=1500V; IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=5V
hFE-2
DC current gain
IC=6A ; VCE=5V
Cob
Collector output capacitance
IE=0 ; VCB=10V,f=1MHz
fT
Transition frequency
IE=0.1A ; VCE=10V
Switching times
ts
Storage time
tf
Fall time
ICP=5A;IB1(_end)=1.0A
fH =64kHz
MIN TYP. MAX UNIT
600
V
3.0
V
1.5
V
1.0
mA
10
µA
15
35
4.3
7.5
105
pF
1.7
MHz
2.5
3.5
µs
0.15
0.3
µs
2