2SC5143 Datasheet, PDF (2/4 Pages) Toshiba Semiconductor – NPN TRIPLE DIFFUSED MESA TYPE (HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV. HIGH SPEED SWITCHING APPLICATIONS)

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC5143
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)EBO Emitter-base breakdown voltage
IE=400mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=6A; IB=1.5A
VBEsat
Base-emitter saturation voltage
IC=6A ;IB=1.5A
ICBO
Collector cut-off current
VCB=1700V; IE=0
IEBO
hFE-1
hFE-2
Cob
VF
Emitter cut-off current
DC current gain
DC current gain
Collector output capacitance
Diode forward voltage
VEB=5V; IC=0
IC=1A ; VCE=5V
IC=6A ; VCE=5V
IE=0 ; VCB=10V,f=1MHz
IF=6A
fT
Transition frequency
IE=0.1A ; VCE=10V
Switching times (inductive load)
ts
Storage time
tf
Fall time
ICP=5A;IB1_(end) =1A
fH=31.5kHz
MIN TYP. MAX UNIT
5
V
3.0
V
0.9
1.2
V
1
mA
83
250 mA
8
25
4
8.5
185
pF
1.8
V
2
MHz
4
6
µs
0.2
0.5
µs
2