2SC508 Datasheet, PDF (2/3 Pages) Inchange Semiconductor Company Limited – Silicon NPN Power Transistors

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC508
CHARACTERISTICS
Tj=25? unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=30mA; IB=0
V(BR)CBO Collector-base breakdown voltage IC=1mA; IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA; IC=0
VCEsat Collector-emitter saturation voltage IC=4A; IB=0.4 A
VBEsat Base-emitter saturation voltage
IC=4A; IB=0.4 A
ICBO
Collector cut-off current
VCB=180V;IE=0
IEBO
Emitter cut-off current
VEB=6V; IC=0
hFE
DC current gain
IC=4A ; VCE=5V
MIN TYP. MAX UNIT
60
V
180
V
6
V
1.5
V
1.5
V
100 µA
100 µA
20
2