2SC4370 Datasheet, PDF (2/3 Pages) Savantic, Inc. – Silicon NPN Power Transistors

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC4370
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0
VCEsat Collector-emitter saturation voltage IC=0.5A; IB=50mA
VBE
Base-emitter on voltage
IC=0.5A;VCE=5V
ICBO
Collector cut-off current
VCB=160V; IE=0
IEBO
Emitter cut-off current
hFE
DC current gain
fT
Transition frequency
COB
Collector output capacitance
VEB=5V; IC=0
IC=0.1A ; VCE=5V
IC=0.1A ; VCE=10V
f=1MHz;VCB=10V
MIN TYP. MAX UNIT
160
V
1.5
V
1.0
V
1.0 µA
1.0 µA
70
240
100
MHz
25
pF
h_FE Classifications
O
Y
70-140
120-240
2