2SC4369 Datasheet, PDF (2/3 Pages) Savantic, Inc. – Silicon NPN Power Transistors

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC4369
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0
VCEsat Collector-emitter saturation voltage IC=2A ;IB=0.2A
VBE
Base-emitter on voltage
IC=0.5A ; VCE=2V
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
hFE-1
DC current gain
hFE-2
DC current gain
VCB=20V; IE=0
VEB=5V; IC=0
IC=0.5A ; VCE=2V
IC=2.5A ; VCE=2V
fT
Transition frequency
IC=0.5A ; VCE=2V
MIN TYP. MAX UNIT
30
V
0.8
V
1.0
V
1.0
µA
1.0
µA
70
240
25
100
MHz
h_FE-1 Classifications
O
Y
70-140
120-240
2