2SC4278 Datasheet, PDF (2/3 Pages) Savantic, Inc. – Silicon NPN Power Transistors

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC4278
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=25mA; IB=0
VCEsat Collector-emitter saturation voltage IC=5A ;IB=0.5A
VBEsat
Base-emitter saturation voltage
IC=5A ;IB=0.5A
ICBO
Collector cut-off current
VCB=150V; IE=0
IEBO
Emitter cut-off current
VEB=6V; IC=0
hFE
DC current gain
IC=1A ; VCE=5V
fT
Transition frequency
IC=1A ; VCE=10V
h_FE Classifications
D
E
60-120
100-200
F
160-320
MIN TYP. MAX UNIT
150
V
1.5
V
2.0
V
0.1
mA
0.1
mA
60
320
20
MHz
2