2SC4276 Datasheet, PDF (2/4 Pages) Fuji Electric – TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE,HIGH SPEED SWITCHING

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC4276
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter sustaining voltage IC=0.2A ;IB=0
V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=6A; IB=1.2A
VBEsat
Base-emitter saturation voltage
IC=6A; IB=1.2A
ICBO
Collector cut-off current
VCB=450V; IE=0
IEBO
Emitter cut-off current
VEB=10V; IC=0
hFE
DC current gain
IC=2A ; VCE=5V
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=7.5A;RL=20A
IB1=0.75A; IB2=-1.5A
Pw = 20µs; DutyB2%
MIN TYP. MAX UNIT
400
V
500
V
10
V
0.8
V
1.2
V
100 µA
100 µA
25
65
1.0
µs
2.5
µs
0.5
µs
2