2SC4157 Datasheet, PDF (2/3 Pages) Toshiba Semiconductor – NPN TRIPLE DIFFUSED TYPE (SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING, HIGH SPEED DC-DC CONVERTER APPLICATIONS)

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC4157
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ,IB=0
V(BR)CBO Collector-base breakdown voltage
IC=1mA ,IE=0
VCEsat Collector-emitter saturation voltage IC=5A; IB=1A
VBEsat
Base-emitter saturation voltage
IC=5A; IB=1A
ICBO
Collector cut-off current
VCB=500V; IE=0
IEBO
Emitter cut-off current
VEB=8V; IC=0
hFE
DC current gain
IC=5A ; VCE=5V
Switching times
t_r
Rise time
t_stg
Storage time
t_f
Fall time
VCC<200V
IB1=-IB2=0.5A ; RL=40>
MIN TYP. MAX UNIT
450
V
600
V
1.0
V
2.0
V
100
µA
1.0
mA
15
0.5
µs
2.5
µs
0.5
µs
2