2SC4110 Datasheet, PDF (2/3 Pages) Sanyo Semicon Device – Switching Regulator Applications

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC4110
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;RBE=;
V(BR)CBO Collector-base breakdown voltage
IC=1mA; IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA; IC=0
VCE_(sat) Collector-emitter saturation voltage IC=16A; IB=3.2A
VBE_(sat) Base-emitter saturation voltage
IC=16A; IB=3.2A
ICBO
Collector cut-off current
VCB=400V; IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=3.2A ; VCE=5V
hFE-2
DC current gain
IC=16A ; VCE=5V
hFE-3
DC current gain
IC=10mA ; VCE=5V
fT
Transition frequency
IC=3.2A ; VCE=10V
C_ob
Output capacitance
IE=0; VCB=10V,f=1MHz
Switching times
t_on
Turn-on time
t_s
Storage time
t_f
Fall time
IC=20A; IB1=4A;IB2=-8A
RL=10B;VCC=200V
MIN TYP. MAX UNIT
400
V
500
V
7
V
0.8
V
1.5
V
10
µA
10
µA
15
50
10
10
20
MHz
300
pF
0.5
µs
2.5
µs
0.3
µs
2