2SC4108 Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – Switching Regulator Applications

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC4108
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=5mA ; RBE=:
V(BR)CBO Collector-base breakdown voltage
IC=1mA ; IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ; IC=0
VCEsat
VBEsat
ICBO
IEBO
Collector-emitter saturation voltage IC=8A; IB=1.6A
Base-emitter saturation voltage
IC=8A; IB=1.6A
Collector cut-off current
VCB=400V ;IE=0
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=1.6A ; VCE=5V
hFE-2
DC current gain
hFE-3
DC current gain
fT
Transition frequency
COB
Collector output capacitance
Switching times
IC=8A ; VCE=5V
IC=10mA ; VCE=5V
IC=1.6A ; VCE=10V
f=1MHz ; VCB=10V
ton
Turn-on time
tstg
Storage time
tf
Fall time
IC=10A;IB1=2A;
IB2=-4A;RL=20C
VCC=200V
h_FE-1 classifications
L
M
15-30
20-40
N
30-50
MIN TYP. MAX UNIT
400
V
500
V
7
V
0.8
V
1.5
V
10
µA
10
µA
15
50
10
10
20
MHz
160
pF
0.5
µs
2.5
µs
0.3
µs
2