2SC4107 Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – Switching Regulator Applications

SavantIC Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=5mA ; RBE=;
V(BR)CBO Collector-base breakdown voltage
IC=1mA ; IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ; IC=0
VCEsat
VBEsat
ICBO
IEBO
Collector-emitter saturation voltage IC=6A; IB=1.2A
Base-emitter saturation voltage
IC=6A; IB=1.2A
Collector cut-off current
VCB=400V ;IE=0
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=1.2A ; VCE=5V
hFE-2
DC current gain
hFE-3
DC current gain
fT
Transition frequency
COB
Collector output capacitance
Switching times
IC=6A ; VCE=5V
IC=10mA ; VCE=5V
IC=1.2A ; VCE=10V
f=1MHz ; VCB=10V
ton
Turn-on time
tstg
Storage time
tf
Fall time
IC=7A;IB1=1.4A;
IB2=-2.8A;RL=28.6B
VCC=200V
h_FE-1 classifications
L
M
N
15-30 20-40 30-50
Product Specification
2SC4107
MIN TYP. MAX UNIT
400
V
500
V
7
V
0.8
V
1.5
V
10
µA
10
µA
15
50
10
10
20
MHz
120
pF
0.5
µs
2.5
µs
0.3
µs
2