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2SC4029 Datasheet, PDF (2/4 Pages) Mospec Semiconductor – POWER TRANSISTOR(15A,230V,150W)
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC4029
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0
VCEsat Collector-emitter saturation voltage IC=8A ;IB=0.8A
VBE
ICBO
IEBO
hFE-1
Base-emitter voltage
Collector cut-off current
Emitter cut-off current
DC current gain
IC=7A ; VCE=5V
VCB=230V IE=0
VEB=5V; IC=0
IC=1A ; VCE=5V
hFE-2
DC current gain
IC=7A ; VCE=5V
fT
Transition frequency
COB
Collector output capacitance
IC=1A ; VCE=5V
f=1MHz;VCB=10V
MIN TYP. MAX UNIT
230
V
3.0
V
1.5
V
5
µA
5
µA
55
160
35
30
MHz
270
pF
hFE-1 classifications
R
O
55-110
80-160
2