2SC3979 Datasheet, PDF (2/4 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

SavantIC Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=10mA , IB=0
VCEsat Collector-emitter saturation voltage IC=0.8A ;IB=0.16A
VBEsat
Base-emitter saturation voltage
IC=0.8A; IB=0.16A
ICBO
Collector cut-off current
VCB=900V; IE=0
IEBO
Emitter cut-off current
VEB=7V; IC=0
hFE-1
DC current gain
IC=0.1A ; VCE=5V
hFE-2
DC current gain
IC=0.8A ; VCE=5V
fT
Transition frequency
IC=0.15A ; VCE=5V
Switching times
t_on
Turn-on time
t_s
Storage time
t_f
Fall time
IC=0.8A ;IB1=0.16A
IB2=-0.32A
VCC=250V
Product Specification
2SC3979
MIN TYP. MAX UNIT
800
V
1.5
V
1.5
V
50
µA
50
µA
8
6
10
MHz
0.7
µs
2.5
µs
0.3
µs
2