2SC3973 Datasheet, PDF (2/4 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC3973 2SC3973A
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=10mA , IB=0
VCEsat Collector-emitter saturation voltage IC=4A; IB=0.8A
VBEsat
Base-emitter saturation voltage
IC=4A; IB=0.8A
ICBO
Collector
cut-off current
2SC3973 VCB=800V; IE=0
2SC3973A VCB=900V; IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=0.1A ; VCE=5V
hFE-2
DC current gain
fT
Transition frequency
Switching times
IC=4A ; VCE=5V
IC=0.5A ; VCE=10V
t_on
Turn-on time
t_s
Storage time
t_f
Fall time
IC=4A; IB1=0.8A
IB2=-1.6A;VCC=200V
MIN TYP. MAX UNIT
500
V
1.0
V
1.5
V
0.1
mA
0.1
mA
15
8
20
MHz
1.0
µs
3.0
µs
0.3
µs
2