2SC3969 Datasheet, PDF (2/3 Pages) Rohm – High Voltage Switching Transistor(400V, 2A)

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC3969
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=1.0A ;IB1=0.1A,L=1mH
V(BR)CEO Collector-emitter breakdown voltage IC=1mA ;IB=0
V(BR)CBO Collector-base breakdown voltage
IC=50µA ;IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=50µA ;IC=0
VCEsat
VBEsat
ICBO
IEBO
hFE
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
IC=1A; IB=0.2A
IC=1A; IB=0.2A
VCB=400V; IE=0
VEB=7V; IC=0
IC=0.1A ; VCE=5V
fT
Transition frequency
IE=-0.1A ; VCE=10V;f=5MHz
COB
Collector outoput capacitance
IE=0; f=1MHz ; VCB=10V
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
VCC@200V ,IC=0.8A
IB1=-IB2=0.08A;RL=250B
MIN TYP. MAX UNIT
400
V
400
V
400
V
7
V
1.0
V
1.5
V
10
µA
10
µA
25
50
10
MHz
30
pF
1.0
µs
2.5
µs
1.0
µs
2