2SC3947 Datasheet, PDF (2/3 Pages) Fujitsu Component Limited. – Silicon High Speed Power Transistor

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC3947
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;RBE=9
V(BR)CBO Collector-base breakdown voltage
IC=1mA ;IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=2.5A ;IB=0.5A
VBEsat
Base-emitter saturation voltage
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
hFE
DC current gain
fT
Transition frequency
IC=2.5A ;IB=0.5A
VCE=800V; IE=0
TC=100
VEB=6V ;IC=0
IC=2.5A ; VCE=5V
IC=0.5A ; VCE=10V
COB
Output capacitance
IE=0 ; VCB=10V;f=1MHz
Switching times
tr
Rise time
tstg
Storage time
tf
Fall time
IC=2.5A ; VCC=250V
IB1=0.5A; IB2=-1A
MIN TYP. MAX UNIT
500
V
850
V
7
V
1.0
V
1.5
V
0.1
1.0
mA
0.1
mA
10
30
20
MHz
70
pF
0.5
µs
3.0
µs
0.3
µs
2