2SC3902 Datasheet, PDF (2/4 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC3902
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=1mA ;RBE=;
V(BR)CBO Collector-base breakdown voltage
IC=10µA ;IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=10µA;IC=0
VCEsat
VBEsat
ICBO
IEBO
Collector-emitter saturation voltage IC=500mA; IB=50mA
Base-emitter saturation voltage
IC=500mA; IB=50mA
Collector cut-off current
VCB=120V; IE=0
Emitter cut-off current
VEB=4V; IC=0
hFE-1
DC current gain
IC=100mA ; VCE=5V
hFE-2
DC current gain
Cob
Output capacitance
fT
Transition frequency
Switching times
IC=10mA ; VCE=5V
IE=0 ; VCB=10V f=1MHz
IC=50mA ; VCE=10V
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=0.7A; IB1=-IB2=0.07A
VCC=100V ,RL=14.3C
MIN TYP. MAX UNIT
160
V
180
V
6
V
0.45
V
1.2
V
0.1
µA
0.1
µA
100
400
90
14
pF
120
MHz
0.04
µs
1.2
µs
0.08
µs
h_FE-1 Classifications
R
S
T
100-200 140-280 200-400
2