2SC3896 Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – Very High-Definition CRT Display Horizontal Deflection Output Applications

SavantIC Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ;IB=0
VCEsat Collector-emitter saturation voltage IC=6A ;IB=1.5A
VBEsat
Base-emitter saturation voltage
IC=6A ;IB=1.5A
ICBO
Collector cut-off current
VCB=800V ;IE=0
ICES
Collector cut-off current
VCE=1500V; RBE=0
IEBO
Emitter cut-off current
VEB=4V ;IC=0
hFE-1
DC current gain
IC=1A ; VCE=5V
hFE-2
DC current gain
IC=6A ; VCE=5V
Switching times
tstg
Storage time
tf
Fall time
IC=6A ; VCC=200V
IB1=1.2A; IB2=2.4A
RL=33.3@
Product Specification
2SC3896
MIN TYP. MAX UNIT
800
V
5.0
V
1.5
V
10
µA
1.0
mA
1.0
mA
8
4
8
3.0
µs
0.1
0.2
µs
2