2SC3892 Datasheet, PDF (2/3 Pages) Inchange Semiconductor Company Limited – Silicon NPN Power Transistors

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC3892
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)EBO Emitter-base breakdown voltage
IE=200mA , IC=0
VCEsat Collector-emitter saturation voltage IC=5A ;IB=1.2A
VBEsat
Base-emitter saturation voltage
IC=5A ;IB=1.2A
ICBO
Collector cut-off current
VCB=500V; IE=0
IEBO
Emitter cut-off current
hFE
DC current gain
fT
Transition frequency
COB
Collector output capacitance
V_F
Diode forward voltage
ts
Storage time
t_f
Fall time
VEB=5V; IC=0
IC=1A ; VCE=5V
IC=0.1A ; VCE=10V
IE=0 ; VCB=10V;f=1MHz
IF=5A
Resistive load
ICP=5A ;IB1=1A;IB2=-2A;RL=40A
MIN TYP. MAX UNIT
5
V
5.0
V
1.5
V
10
µA
66
200 mA
8
12
1
3
MHz
210
pF
2.0
V
2.5
µs
0.2
µs
2