2SC3886 Datasheet, PDF (2/4 Pages) Inchange Semiconductor Company Limited – Silicon NPN Power Transistors

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC3886
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=5mA ;IB=0
VCEsat Collector-emitter saturation voltage IC=6A; IB=1.5A
VBEsat
Base-emitter saturation voltage
IC=6A; IB=1.5A
ICBO
Collector cut-off current
VCB=1400V; IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE
DC current gain
IC=1A ; VCE=5V
Cob
Collector output capacitance
IE=0 ; VCB=10V,f=1MHz
fT
Transition frequency
IE=0.1A ; VCE=10V
Switching times inductive load
ts
Storage time
tf
Fall time
ICP=6A;IB1=1.2A
fH =64kHz
LY=120µH;CY=7500pF
MIN TYP. MAX UNIT
600
V
5
V
5
V
1.0 mA
10
µA
8
15
150
pF
3
8
MHz
2.5
4.0
µs
0.1
0.5
µs
2