2SC3870 Datasheet, PDF (2/3 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC3870
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=10mA ;IB=0
VCEsat Collector-emitter saturation voltage IC=3A ;IB=0.6A
VBEsat
Base-emitter saturation voltage
IC=3A ;IB=0.6A
ICBO
Collector cut-off current
VCB=500V; IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=0.1A ; VCE=5V
hFE-2
DC current gain
IC=3A ; VCE=5V
fT
Transition frequency
IC=0.5A ; VCE=10V
Switching times
t_on
Turn-on time
t_s
Storage time
t_f
Fall time
IC=3A ;IB=0.6A;IB2=-1.2A
VCC=150V
MIN TYP. MAX UNIT
400
V
1.0
V
1.5
V
100
µA
100
µA
15
8
30
MHz
0.7
µs
2.0
µs
0..3
µs
2