2SC3866 Datasheet, PDF (2/4 Pages) Fuji Electric – TRIPLE DIFFUSED PLANER TYPE

SavantIC Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=10mA , IB=0
V(BR)CBO Collector-base breakdown voltage
IC=1mA , IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA , IC=0
VCEsat Collector-emitter saturation voltage IC=1A; IB=0.2A
VBEsat
Base-emitter saturation voltage
IC=1A; IB=0.2A
ICBO
Collector cut-off current
VCB=900V; IE=0
IEBO
Emitter cut-off current
VEB=10V; IC=0
hFE
DC current gain
Switching times
IC=1A ; VCE=5V
t_on
Turn-on time
t_s
Storage time
t_f
Fall time
IC=2A; IB1=0.4A
IB2=-0.8A;RL=150A
Pw=20µs,DutyB2%
Product Specification
2SC3866
MIN TYP. MAX UNIT
800
V
900
V
10
V
1.0
V
1.5
V
1.0
mA
1.0
mA
10
1.0
µs
4.0
µs
0.8
µs
2