2SC3694 Datasheet, PDF (2/3 Pages) Savantic, Inc. – Silicon NPN Power Transistors

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC3694
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=8A; IB=0.8A;L=1mH
VCE(sat)1 Collector-emitter saturation voltage IC=8A ; IB=0.4A
VCE(sat)2 Collector-emitter saturation voltage IC=12A ; IB=0.6A
VBE(sat)1 Base-emitter saturation voltage
IC=8A ; IB=0.4A
VBE(sat)2 Base-emitter saturation voltage
IC=12A ; IB=0.6A
ICBO
Collector cut-off current
VCB=60V;IE=0
ICER
Collector cut-off current
VCB=60V;RBE=50?;Ta=125°C
ICEX1
Collector cut-off current
VCB=60V; VBE=-1.5V
ICEX2
Collector cut-off current
VCB=60V; VBE=-1.5V;Ta=125°C
IEBO
Emitter cut-off current
VEB=5V;IC=0
hFE-1
DC current gain
IC=1.5A ; VCE=2V
hFE-2
DC current gain
IC=3.0A ; VCE=2V
hFE-3
DC current gain
IC=8.0A ; VCE=2V
Cob
Collector capacitance
VCB=10V;IE=0;f=1.0MHz
fT
Transition frequency
IC=1.5A ; VCE=10V
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=8.0A; IB1=-IB2=0.4A
VCC=50V ,RL=6.3?
MIN TYP. MAX UNIT
60
V
0.3
V
0.5
V
1.2
V
1.5
V
10
µA
1.0
mA
10
µA
1.0
mA
10
µA
100
100
400
60
180
pF
120
MHz
0.3
µs
1.5
µs
0.3
µs
h_FE-2 Classifications
M
L
K
100-120 150-300 200-400
2