2SC3365 Datasheet, PDF (2/4 Pages) Hitachi Semiconductor – Silicon NPN Triple Diffused

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC3365
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ;RBE=:,L=100mH
V(BR)EBO Emitter-base breakdown voltage
IE=10mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=5A; IB=1A
VBEsat
Base-emitter saturation voltage
IC=5A ;IB=1A
ICBO
Collector cut-off current
VCB=400V; IE=0
ICEO
Collector cut-off current
VCE=350V; RBE=:
hFE-1
DC current gain
IC=5A ; VCE=5V
hFE-2
DC current gain
IC=10A ; VCE=5V
Switching times resistive load
ton
Turn-on time
t_s
Storage time
t_f
Fall time
IC=10A; IB1=-IB2=2A
VCC?150V
MIN TYP. MAX UNIT
400
V
10
V
1.0
V
1.5
V
50
µA
50
µA
12
5
1.0
µs
2.5
µs
1.0
µs
2