2SC3179 Datasheet, PDF (2/3 Pages) Sanken electric – Silicon NPN Triple Diffused Planar Transistor(Audio and General Purpose)

SavantIC Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=25mA ,IB=0
VCE(_sat) Collector-emitter saturation voltage IC=2A; IB=0.2 A
ICBO
Collector cut-off current
VCB=80V; IE=0
IEBO
Emitter cut-off current
VEB=6V; IC=0
hFE
DC current gain
IC=1A ; VCE=4V
fT
Transition frequency
IE=-0.2A ; VCE=12V
COB
Output capacitance
f=1MHz ; VCB=10V
Switching times resistive load
t_on
Turn-on time
t_s
Storage time
t_f
Fall time
IC=2A IB1=-IB2=0.2A
RL=10A;VCC=20V
Product Specification
2SC3179
MIN TYP. MAX UNIT
60
V
0.6
V
100
µA
100
µA
40
15
MHz
60
pF
0.2
µs
1.9
µs
0.29
µs
2