2SC3151 Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – For Switching Regulators

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC3151
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=5mA ;RBE==
V(BR)CBO Collector-base breakdown voltage
IC=1mA ;IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=0.75A ;IB=0.15A
VBEsat
Base-emitter saturation voltage
IC=0.75A ;IB=0.15A
ICBO
Collector cut-off current
VCB=800V; IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=0.1A ; VCE=5V
hFE -2
DC current gain
IC=0.5A ; VCE=5V
COB
Output capacitance
IE=0 ; VCB=10V;f=1MHz
fT
Transition frequency
IC=0.1A ; VCE=10V
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=1A;IB1=0.2A;IB2=-0.4A
RL=400E,VCC=400V
h_FE-1 classifications
K
L
10-20
15-30
M
20-40
MIN TYP. MAX UNIT
800
V
900
V
7
V
2.0
V
1.5
V
10
µA
10
µA
10
40
8
30
pF
15
MHz
1.0
µs
3.0
µs
0.7
µs
2