2SC3092 Datasheet, PDF (2/3 Pages) Inchange Semiconductor Company Limited – Silicon NPN Power Transistors

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC3092
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=5mA ; RBE=@
V(BR)CBO Collector-base breakdown voltage IC=1mA ; IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ; IC=0
VCE_(sat) Collector-emitter saturation voltage IC=3A; IB=0.6A
VBE_(sat) Base-emitter saturation voltage
IC=3A; IB=0.6A
ICBO
Collector cut-off current
VCB=500V; IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=0.6A ; VCE=5V
hFE-2
DC current gain
IC=3A ; VCE=5V
COB
Output capacitance
IE=0 ; VCB=10V, f=1MHz
fT
Transition frequency
IC=0.6 A ; VCE=10V
Switching times
t_on
Turn-on time
t_s
Storage time
t_f
Fall time
IC=4A; IB1=0.8A;IB2=-1.6A
VCC=200V ,RL=50F
MIN TYP. MAX UNIT
500
V
800
V
7
V
1.0
V
1.5
V
10
µA
10
µA
15
50
8
80
pF
18
MHz
0.5
µs
3.0
µs
0.3
µs
h_FE-1 classifications
L
M
N
15-30 20-40 30-50
2