2SC3086 Datasheet, PDF (2/3 Pages) Mospec Semiconductor – POWER TRANSISTORS(3A,500V,40W)

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC3086
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=1mA ; RBE=B
V(BR)CBO Collector-base breakdown voltage
IC=1mA ; IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ; IC=0
VCE(_sat) Collector-emitter saturation voltage IC=1.5A; IB=0.3A
VBE(_sat) Base-emitter saturation voltage
IC=1.5A; IB=0.3A
ICBO
Collector cut-off current
VCB=500V ;IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=0.3A ; VCE=5V
hFE-2
DC current gain
IC=1.5A ; VCE=5V
fT
Transition frequency
IC=0.3A ; VCE=10V
COB
Output capacitance
f=10MHz ; VCB=10V
Switching times
t_on
Turn-on time
t_stg
Storage time
t_f
Fall time
VCC=200V; IC=2A
IB1=0.4A;IB2=-0.4A;
RL=100F
h_FE-1 classifications
L
M
N
15-30
20-40
30-50
MIN TYP. MAX UNIT
500
V
800
V
7
V
1.0
V
1.5
V
10
µA
10
µA
15
50
8
18
MHz
40
pF
1.0
µs
3.0
µs
1.0
µs
2