2SC2899 Datasheet, PDF (2/4 Pages) Hitachi Semiconductor – Silicon NPN Triple Diffused

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC2899
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A; RBE=:,L=100mH
V(BR)EBO Emitter-base breakdown voltage
IE=10mA; IC=0
VCEsat Collector-emitter saturation voltage IC=250mA; IB=50m A
VBEsat
Base-emitter saturation voltage
IC=250mA ;IB=50m A
hFE-1
DC current gain
IC=250mA ; VCE=5V
hFE-2
DC current gain
IC=500mA ; VCE=5V
ICBO
Collector cut-off current
VCB=400V; IE=0
ICEO
Collector cut-off current
VCE=350V; RBE=:
Switching times
ton
Turn-on time
tstg
Storage time
tf
Fall time
IC=0.5A; IB1=-IB2=0.1A
VCC?150V
MIN TYP. MAX UNIT
400
V
10
V
1.0
V
1.5
V
15
7
20
µA
50
µA
1.0
µs
2.0
µs
1.0
µs
2