2SC2626 Datasheet, PDF (2/4 Pages) Fuji Electric – TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE HIGH SPEED SWITCHING

SavantIC Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0
VCEO(SUS) Collector-emitter sustaining voltage IC=1A ;IB=0
V(BR)CBO Collector-base breakdown voltage
IC=1mA ;IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=0.1mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=6A; IB=1.2A
VBEsat
Emitter-base saturation voltage
IC=6A ;IB=1.2A
ICBO
Collector cut-off current
VCB=400V; IE=0
IEBO
Emitter cut-off current
VEB=7V; IC=0
hFE
DC current gain
IC=6A ; VCE=5V
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=10A IB1=-IB2=2A
RL=20C,Pw=20µs
DutyD2%
Product Specification
2SC2626
MIN TYP. MAX UNIT
300
V
300
V
400
V
7
V
1.2
V
1.5
V
1.0
mA
0.1
mA
10
0.8
µs
2.0
µs
0.8
µs
2