2SC2527 Datasheet, PDF (2/3 Pages) Fujitsu Component Limited. – SILICON HIGH SPEED POWER TRANSISTOR

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC2527
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=1mA ; RBE=:
V(BR)CBO Collector-base breakdown voltage
IC=50µA ; IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=50µA ; IC=0
VCEsat Collector-emitter saturation voltage IC=5A; IB=0.5A
VBE
Base-emitter on voltage
IC=5 A ; VCE=5V
ICBO
Collector cut-off current
VCB=120V ;IE=0
ICEO
Collector cut-off current
VCE=120V; IB=0
IEBO
Emitter cut-off current
VEB=7V ;IC=0
hFE-1
DC current gain
IC=1 A ; VCE=5V
hFE -2
DC current gain
IC=5 A ; VCE=5V
fT
Transition frequency
IC=1 A ; VCE=10V
COB
Output capacitance
IE=0 ; VCB=10V; f=1MHz
Switching times
tr
Rise time
ts
Storage time
tf
Fall time
IC=7.5 A; RL=4B
IB1=-IB2=0.75A
MIN TYP. MAX UNIT
120
V
120
V
7
V
1.8
V
1.7
V
50
µA
1
mA
50
µA
60
200
40
80
MHz
180
pF
0.3
µs
1.3
µs
0.2
µs
2