2SC2502 Datasheet, PDF (2/3 Pages) Mospec Semiconductor – POWER TRANSISTORS(6.0A,400V,50W)

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC2502
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ; IB=0
VCEsat Collector-emitter saturation voltage IC=3A; IB=0.3A
VBEsat
Base-emitter saturation voltage
ICEO
Collector cut-off current
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
IC=3A; IB=0.3A
VCE=320V ;IB=0
VCB=500V ;IE=0
VEB=7V; IC=0
hFE-1
DC current gain
IC=3A ; VCE=2V
hFE-2
DC current gain
fT
Transition frequency
Switching times
IC=6A ; VCE=2V
IC=0.6A ; VCE=10V;f=1MHz
ton
Turn-on time
tstg
Storage time
tf
Fall time
IC=3A
IB1=-IB2=0.6A;
RL=10C,VCC=30V
MIN TYP. MAX UNIT
400
V
0.7
V
1.5
V
100
µA
100
µA
1
mA
15
8
10
MHz
1.0
µs
3.0
µs
0.7
µs
2