2SC2373 Datasheet, PDF (2/4 Pages) Mospec Semiconductor – POWER TRANSISTORS(7.5A,100V,40W)

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC2373
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEsat
VBEsat
VCEO
VEBO
ICBO
IEBO
hFE
fT
Collector-emitter saturation voltage IC=5A; IB=0.5 A
Base-emitter saturation voltage
IC=5A; IB=0.5 A
Collector-emitter voltage
IC=30mA; IB=0
Emitter-base voltage
IE=1.0mA; IC=0
Collector cut-off current
VCB=150V;IE=0
Emitter cut-off current
VEB=5V; IC=0
DC current gain
IC=5A ; VCE=5V
Transition frequency
IC=0.1A ; VCE=5V;f=3.0MHz
MIN TYP. MAX UNIT
1.5
V
1.5
V
100
V
7
V
10
µA
10
µA
15
70
5.0
MHz
ton
Turn-on time
ts
Storage time
tf
Fall time
h_FE classifications
M
L
15-35
25-45
K
35-70
VCC=20V;IC=5.0A
IB1=-IB2=0.6A
PW=20µs
1.0
µs
2.5
µs
1.0
µs
2